| 1. | Chemical analysis for silicon carbide refractories - determination of free silicon - gas volumetric method
气体容量法测定游离硅量 |
| 2. | Chemical analysis for silicon carbide refractories - determination of free silicon - gas volumetric method
碳化硅耐火材料化学分析方法气体容量法测定游离硅量 |
| 3. | Testing of ceramic materials ; chemical analysis of silicon carbide ; determination of the free silicon content
陶瓷材料的检验.碳化硅的化学分析.游离硅含量的测定 |
| 4. | An ideal way to improve this is to replace the free si with msi2 ( m stands for metal element ) with a melting point up 1700 1c
用高熔点的msi _ 2 ( m表金属元素)取代游离硅是提高材料使用温度的理想途径。 |
| 5. | Chemical analysis for silicon nitride bonded silicon carbide product . determination of free silicon content . molybdenum blue photometric method
氮化硅结合碳化硅制品化学分析方法.钼蓝光度法测定游离硅量 |
| 6. | But usually , the rbsc materials contains some amounts of free silicon . the existence of the free si limits its summit use temperature
但是，由于工艺本身的特点， rbsc材料中含有一定量的游离硅( fsi ) 。 |
| 7. | It shows there was a critical volume fraction . only when the initial pore volume fraction of the perform equal to the critical volume fraction , the free si was fully replaced with the mosi2 particles . otherwise . there would be free c and free si in the infiltrated materials
结果表明，坯体的初始空隙率存有一个临界值。只有当坯体的初始空隙率等于此值时，材料中的游离硅才可能被mosi _ 2完全取代。 |
