| 1. | In fet devices , the presence of an electrical field at the gate moderates the flow between the source and drain
在fet器件中，栅极电场的存在会调节源极和漏极之间的电流。 |
| 2. | Ti ? the resistance measured across the channel drain and source ( or input and output ) of a bus - switch device
测量总线开关器件指定通道的源漏极间(或输入和输出)所得到的阻抗。 |
| 3. | Quasi - static capacitance has been measured , when drain voltage is 0v , and gate voltage changes from ? 5v to 0v , the surface peak
采用应力测试方法,获得了algan / ganhemt漏极电流随时间的变化。 |
| 4. | Under hot carrier stress , device degradation is the consequence of hot carrier induced defect generation locally at drain side
在热载流子应力条件下,器件的退化主要是由于在漏极附近由热载流子产生的损伤缺陷引起的。 |
| 5. | In the fifth chapter the shunt negative feedback is presented , and a low noise amplifier whose operating frequency is 0 . 2ghz 2ghz is developed
第五章分析了漏极并联负反馈在宽带低噪声放大器设计中的作用和原理,并设计、制作了0 . 2ghz 2ghz低噪声放大器。 |
| 6. | Under high drain voltage condition , the results proved that channel electrons are easily ejected into gan buffer layer and be trapped to induce current collapse
在大漏极电压条件下,沟道电子易于注入到gan缓冲层中,并被缓冲层中的陷阱所俘获,耗尽二维电子气,从而导致电流崩塌效应。 |
| 7. | Small signal jfets work very well as low - leakage diodes by connecting drain & source together in log current - to - voltage converters and low leakage input protection
在对数电流-电压转换器和低漏电流输入保护电路中，通过连接小信号jfets的漏极和源极，可以使之作为低漏电流二极管很好的使用。 |
| 8. | For low distortion , the drains ( or collectors ) of a differential amp " s front - end should be bootstrapped to the source ( or emitter ) so that the voltages on the part are not modulated by the input signal
为了得到低失真，差分放大器前端的漏极（或集电极）应该被引导到源极（或射极） ，这样端口电压就不会被输入信号调制了。 |
| 9. | Under a unified model of carrier transport over trap state established potential barrier at drain side , device degradation behavior such as asymmetric on - current recovery and threshold voltage degradation can be understood
我们通过载流子在漏极附加陷阱态势垒的输运模型,解释了器件在应力后出现的阈值电压的退化现象和非对称性开态电流恢复现象。 |
| 10. | The result of the test for dynamic breakdown characteristics reveal that breakdown voltage increases as the lengths of the pulses applied to the gate and drain electrodes increase . this could be mainly due to the influence of surface states
Gaasmesfet动态击穿特性测试结果表明， gaasmesfet的击穿电压随栅极与漏极上所加脉冲电压宽度的增大而增大，这主要是因为表面态的原因。 |
