Chinese translation for "电压漂移"

voltage drift
voltage-drift

Related Translations:

漂移:  1.(漂流移动) be driven by the current; drift about2.[电子学] drift; shift; shifting; shunt running; creeping; wander◇漂移浮标 drifting buoy; 漂移度 driftance; 漂移晶体管 drift transistor; 漂移力 drift force; 漂移

基线漂移:  base line driftbase line wanderbaseline driftbaseline shiftbaseline wander (blw)

回转仪漂移:  gyro drift

漂移编辑:  drifting editing

无限漂移:  full drift

时钟漂移:  clock drift

风漂移:  wind drift

直流漂移:  dc shiftdc wander

漂移时间:  drift time

灵敏度漂移:  sensitivity drift

Example Sentences:

	1.	Mosfet ; radiation effects ; threshold voltage shift ; radiation sensitivity Mosfet阈值电压漂移辐照效应辐照敏感性
	2.	Simulating threshold voltage shift of mos devices due to radiation in the low - dose range 低剂量辐照条件下的mosfet因辐照导致的阈值电压漂移的模拟
	3.	Output voltage and current is often distorted in half bridge converter because voltage unbalance of input capacitors though its application is very abroad 摘要半桥逆变器应用广泛，但存在直流分压电容不均压，使分压电容中点电压漂移，导致输出电压和电流畸变的缺点。
	4.	Specific issues examined are : compensation for the variation of the stator resistance , the offset error of the dc bus voltage , the voltage error generated by the forward voltage drop the dead time of the switches , improvement of the steady state performance , and the speed sensorless control for the pmsm dtc drive system are of major concern in this thesis 定子电阻变化，直流母线电压漂移，开关器件反向相电压降、逆变器死区时间引起的电压误差的补偿，提高系统稳态运行性能以及永磁同步电机直接转矩控制的无速度传感器运行方案等问题都是本文研究的重点。转矩的快速响应是直接转矩控制算法的一个卓越的性能。
	5.	An analytical mosfet threshold voltage shift model due to radiation in the low - dose range has been developed for circuit simulations . experimental data in the literature shows that the model predictions are in good agreement . it is simple in functional form and hence computationally efficient . it can be used as a basic circuit simulation tool for analysing mosfet exposed to a nuclear environment up to about 1mrad . in accordance with common believe , radiation induced absolute change of threshold voltage was found to be larger in irradiated pmos devices . however , if the radiation sensitivity is defined in the way we did it , the results indicated nmos rather than pmos devices are more sensitive , especially at low doses . this is important from the standpoint of their possible application in dosimetry 该模型物理意义明确，参数提取方便，适合于低辐照总剂量条件下的mos器件与电路的模拟。并进一步讨论了mosfet的辐照敏感性。结果表明，尽管pmos较之nmos因辐照引起的阈值电压漂移的绝对量更大，但从mosfet阈值电压漂移量的摆幅这一角度来看，在低剂量辐照条件下nmos较之pmos显得对辐照更为敏感。
	6.	Secondly , the radiation effects of the system of silicon gate si / sio2 ( silicon gate nmos and pmos ) implanted bf2 are made a deep systematic study . especially , the relationship between threshold voltage shift ( vth and vit vot ) in radiated mos transistor and irradiation dose rate , irradiation dose , irradiation temperature , bias voltage , device structure as well as annealing condition is explored emphatically 在此基础上，对bf _ 2 ~ +注入硅栅si sio _ 2系统低剂量率辐照效应进行了深入系统的研究，着重研究了bf _ 2 ~ -注入mos管阈值电压漂移( vth和vit 、 vot )与辐照剂量率、辐照总剂量、辐照温度、偏置电场、器件结构以及退火条件的依赖关系。

Similar Words：

"电压逆化器" Chinese translation, "电压匹配互感器" Chinese translation, "电压匹配技术" Chinese translation, "电压偏移" Chinese translation, "电压偏移分散" Chinese translation, "电压频率变换器" Chinese translation, "电压频率模" Chinese translation, "电压频率转换器" Chinese translation, "电压频谱" Chinese translation, "电压频谱分析仪" Chinese translation