Chinese translation for "电子迁移率"

electron mobility
electron-transfer step
electronic mobility

Related Translations:

活性迁移:  active transport

动物迁移:  animal migrationanimal movement

迁移植物:  migrant plantmigratory plant

适应迁移:  adaptive migratory

迁移训练:  transfer training

国内迁移:  internal migration

反应迁移:  transfer of response

水分迁移:  moisture migrationwater migrationwater translocation

服务器迁移:  server migration

细胞迁移:  cell migration

Example Sentences:

	1.	High electron mobility transistor hemt 高速电子迁移率晶体管
	2.	I - v testing of a single transistor has been carried out . the p - si film is prepared by ela , and electron mobility is calculated about 30cm2 / v 对用激光晶化法制备的多晶硅薄膜所制备的p - si - tft单管进行了-测试，计算电子迁移率为约30cm ~ 2 v
	3.	Due to the good performance of gaas devices of high frequency , high electron mobility and low noise , the high frequency devices are mostly made of gaas materials now 由于gaas器件优良的高频、高电子迁移率、低噪声性能，所以现在高频器件一般都选用gaas材料。
	4.	Based on gan hemt device physics and experiment results , we found electron mobility is depend on sheet density of 2deg and proposed a new gan hemt current collapse physical model 基于ganhemt器件物理和实验分析测试结果,发现电子迁移率与二维电子气浓度有关,并提出了一种gan电流崩塌效应的新物理模型。
	5.	It is a good candidate for the high quality photoelectronic and microelectronic devices , such as fiber optical communication lasers , photoelectronic detectors , high electron mobility transistors and electro - optic modulators 它是制备性能优良的光电子与微电子器件，如光纤通讯激光器、光电探测器、高电子迁移率晶体管、电光调制器等的主要选择对象之一。
	6.	From which we can draw a conclusion that the hole mobility can experience a 15 % improvement in the strained sige layer while the electron mobility can experience a 48 . 5 % improvement in the strained si layer 通过比较实验我们可以获知,应变si材料中的电子迁移率相比于体si材料最大可有48 . 5 %的提高，而应变sige材料中的空穴迁移率相比于体si材料可有近15 %的提高。
	7.	With the advance of semiconductor manufacturing , circuits with increasingly higher speed are being integrated at an increasingly higher density , which makes analysis and verification of power grid integrity more important . power grid integrity includes four issues , namely , ir drop analysis , ground bounce analysis , ldi / dt from the pin inductance and em analysis 随着超大规模集成电路集成度和工作频率的不断提高，电源网格完整性分析变得越来越重要，一般有四个关键问题： ir电压降分析、接地点电势上升( groundbounce )分析、来自引脚电感的ldi / dt分析和电子迁移率em分析。

Similar Words：

"电子牵引力控制装置" Chinese translation, "电子迁移" Chinese translation, "电子迁移检测器" Chinese translation, "电子迁移聚合物" Chinese translation, "电子迁移链" Chinese translation, "电子迁移率检测器" Chinese translation, "电子签名" Chinese translation, "电子签名法" Chinese translation, "电子签名和认证机构" Chinese translation, "电子签名人" Chinese translation