| 1. | Fast surface states
快界面态 |
| 2. | It is assumed that electron tunneling from silicon into oxide and buildup of interface states are the post - irradiation recovery
假设隧道电子从硅进入氧化层和界面态的建立是辐射效应的恢复机理。 |
| 3. | In the experiment of photo - excited c - v characteristics of sio2 / n - sic , a ledge that had been appeared in p - type sample was observed because of the deep interface states
然后使用光照条件讨论了p和n型sicmos的界面态的性质，即p型为施主态， n型为受主态。 |
| 4. | It shows that the bias in the post - irradiation recovery period and the ratio of the interface state to the electron tunneling influence the recovery rate
模拟结果表明：退火过程所加栅偏压的大小以及隧道电子效应与建立的界面态所占比例的不同影响器件的恢复率。 |
| 5. | But the quality of its oxide is far from adequate for industrial devices . the devices need high quality of oxide film and sio2 / sic interface structure
由于其氧化层的的质量还不能达到工业生产的要求，目前关于sic表面的氧化层质量以及界面态特性仍然需要大量研究。 |
| 6. | It is thought that the emission process happened with the participation of diamond crystal , graphite , amorphous carbon and intra - face states in the diamond films
认为非晶碳、石墨、金刚石及相应界面态构成一个完整的体系参与场发射，金刚石薄膜中杂相的存在有利于电子的场发射。 |
| 7. | With taking advantage of the model of two - stage h + process of interface trap formation and the role that f play in radiation hardness in gate - oxide . the above - mentioned result is deeply analyzed
借助界面态建立的h ~ +两步模型和f在栅氧化层中对抗辐照加固所起的作用对上述结果进行了深入的分析。 |
| 8. | Standard test method for separating an ionizing radiation - induced mosfet threshold voltage shift into components due to oxide trapped holes and interface states using the subthreshold current - voltage characteristics
利用亚阈值安伏特性测定由于氧化空穴和界面态产生的电离辐射感应金属氧化物半导体场效应晶体管阈电压偏移分量的标准试验方法 |
| 9. | The study shows that interface state charges not only increase the threshold voltage , but also lower the mosfet transconductance , drain current and field - effect mobility , which can well explain the results of experiment
分析结果显示界面态电荷不仅使阈值电压增大，而且还会导致器件漏电流减小，跨导和场效应迁移率降低，模拟结果能对实验现象做出很好的解释。 |
| 10. | The effect of interface state charges on the threshold voltage , drain current , transconductance and field - effect mobility of n - channel sic mosfet is analyzed with numerical method by establishing the model of the interface state density exponential distribution
建立界面态密度的指数分布模型，用数值方法较为详细的分析了界面态电荷对n沟mosfet器件阈值，漏电流，跨导和场效应迁移率的影响。 |
