| 1. | Oxidation - induced stacking faults in cz silicon
直拉硅中氧化诱生层错研究进展 |
| 2. | The advance of research on oxygen precipitates in ncz silicon
掺氮直拉单晶硅中氧沉淀的研究进展 |
| 3. | Effects of germanium on oxygen precipitation in heavily boron - doped czochralski silicon
锗对重掺硼直拉硅中氧沉淀的影响 |
| 4. | Liquid encapaulated czochralski - grouwn gallium arsenide single crystals and as - cut slices
液封直拉法砷化镓单晶及切割片 |
| 5. | The nucleation temperature of oxygen precipitation is about 750 c in lightly doped czsi , while the nucleation in heavily as - doped si occurred at a higher temperature ( 750 - 900 c )
普通直拉硅氧沉淀在低温750形核，重掺as硅单晶形核温度较高，在750 - 900之间。 |
| 6. | The effect of high temperature in rapid thermal process ( rtp ) on the dissolution of oxygen precipitate generated by two - step ( low - high ) annealing is investigated
摘要通过对已经过两步（低高）退火的大直径直拉矽单晶片进行高温快速热处理，研究矽中氧沈淀被高温快速热处理消融的情况。 |
| 7. | Some facilities and processed are adopted during this modification , such as continuous taper control mould , leaf - spring guide vibrator , withdrawal se straightening machine and automatic torch cutter
改造中采用了连续锥度结晶器、板簧导向振动装置、连续矫直拉矫机、自动火焰切割机等设备与技术措施。 |
| 8. | The new vibrational infrared absorption band at about 485cm - 1 was annealed at about 400 . it was difficult to annealing v - o complex in fast neutron irradiated si under 600 for 1h
同时快中子辐照后硅中产生v - o复合体等缺陷，在低于600 、 1小时的退火也难以消除，表明快中子辐照直拉硅中的氧相关缺陷更加复杂。 |
| 9. | Yg832 elctronic multifunctional stretcher used for testing indexes of woven fabric , knitted fabric and non - woven fabric . these indexes include breakage , tear , peel , extension , elasticity and various hose stretch , etc
Yg832型电子多功能拉伸仪，用于针织物、机织物(含非机织物)的断裂、撕破、剥落、伸长率、弹性回复率及各类袜品的横拉、直拉等指标的测定。 |
| 10. | Liquid encapsulated czochralski ( lec ) si - gaas is widely used in the microwave device and the substrates of high speed digital optic - electronic integrated circuits , and it has become one of major materials in information industry
液封直拉法生产的半绝缘砷化镓单晶( lecsi - gaas )被广泛用于微波器件和高频集成电路的衬底材料，成为当代信息产业的重要材料之一。 |
