| 1. | Direct - gap semiconductor
直接带隙半导体 |
| 2. | Tin sulfide ( sns ) has an optical band gap of 1 . 3ev , which is close to the optimal band gap 1 . 5ev
Sns的光学直接带隙为1 . 3ev ,接近于太阳能电池材料的最佳禁带宽度1 . 5ev 。 |
| 3. | Zinc oxide ( zno ) is an important wide - band ( 3 . 37ev ) semiconductor with low dielectric constant
Zno是一种重要的宽禁带(常温下为3 . 37ev )低介电常数的直接带隙半导体材料。 |
| 4. | Zinc oxide , zno , a wide direct - gap semiconductor , attracts as much attention as gan in photoelectric research field
Zno ，作为一种直接带隙宽禁带半导体材料，是继gan之后光电研究领域又一热门的研究课题。 |
| 5. | With a broaden and likely direct band gap , porous silicon has a different band structure to that of the bulk silicon . thus the porous silicon can emit at room temperature
多孔硅改变了体硅的能带结构，使禁带展宽，并由间接带隙向直接带隙转变，实现了室温发光。 |
| 6. | Optical absorption measurements show that mnxcd1 - xin2te4 is a direct energy gap semiconductor and the band gap shifts towards the high energy side with the increase of x
采用光吸收法测得mn人d n 。 te 。晶体属于直接带隙半导体，其能隙eg随着组分互的增加线性增大。 |
| 7. | Zinc oxide as a wide band - gap ( 3 . 3ev ) compound semiconductor with wurtzite crystal structure , is gaining importance for the possible application as a semiconductor laser , due to its ultraviolet emission at room temperature
宽禁带zno半导体为直接带隙材料，具有六方结构，较高的激子束缚能( 60mev ) ，室温下带隙宽度为3 . 3ev 。 |
| 8. | 1ev , which is close to the optimum value of the solar radiation . and it has high energy conversion . it is an important material used in the solar energy cells as absorption layer
Sns无毒、环保，其光学直接带隙和间接带隙分别为1 . 2 1 . 5ev和1 . 0 1 . 1ev ，与太阳辐射中的可见光有很好的光谱匹配，非常适合用作太阳能电池中的光吸收层，是一种很有潜力的太阳能电池材料。 |
| 9. | In all of the optoelectronic materials , cds was paid more attention for the excellent properties , which has commercial and potential applications in light - emitting diodes , solar cells , and other optoelectronic devices
在众多半导体纳米材料中， cds纳米粒子以其优良的性能引起了许多科学家的极大关注。 cds是典型的-族直接带隙半导体化合物，室温下其禁带宽度为2 . 42ev 。 |
| 10. | Zno is a directed band semiconductor with a big binding energy . it has gained substantial interest because its large exiton binding energy ( 60mev ) , which could lead to lasing action based exiton recombination even above room temperature , such as led , ld and so on
Zno是一种宽禁带的直接带隙半导体材料,具有非常高的激子束缚能( 60mv ) ,即使在室温条件下激子也不会分解,因此可以被用作光发射器件,如led和ld等。 |
