| 1. | Methods of measuring shape memory alloys ' transformation temperature
形状记忆合金相变温度的常用测量方法 |
| 2. | Method for determining the transformation temperature of shape memory alloys
形状记忆合金相变温度的测定方法 |
| 3. | Transformation temperature and mechanical properties of niti shape memory alloy thin films
镍钛形状记忆合金薄膜的相变温度和力学性能 |
| 4. | The zinc complex tlppzn has a narrow mesophase from - 36 . 40 ? to 39 . 78 ? ( 76 . 18 ? ) ,
锌叶琳液晶材料的相变温度最低的是tlppzn ，始于一36 |
| 5. | The critical temperature from cubic to hexagonal phase was measured for the 11 - nm zns nanoparticles
该温度远低于zns体材料的相变温度1020 。 |
| 6. | The effects of the polymer network on the packing arrangement of the ferroelectric liquid crystal molecules are examined by means of optical microscopy
双丙烯酸单体或聚合体网络的存在会导致铁电液晶载体的相变温度降低。 |
| 7. | Ii ) with the increase of the long - range interaction and the interfacial coupling , the pyroelectric coefficient before the phase transition temperature decreases
另外，随着长程相互作用以及界面耦合强度的增强，相变温度以下的热电系数明显减小。 |
| 8. | On the other hand , relationship between doping concentration , phase transition temperature , magnitude of resistance change and hysteresis width was investigated
在此基础上,本文进一步探讨了掺杂浓度与vo _ 2薄膜相变温度、电阻突变数量级以及热滞宽度的关系。 |
| 9. | Then , the effect of vacuum annealing temperature on vo _ 2 thin film phase transition temperature , magnitude of resistance change and hysteresis width by doping zr ~ ( 4 + ) was discussed
( 2 )本文以掺锆为例,探讨了不同的真空退火温度对vo _ 2薄膜的相变温度、电阻突变数量级以及热滞宽度有何影响。 |
| 10. | Since 1980s research about doped vo _ 2 matrix has shown that doping could alter the phase transition temperature of vo _ 2 thin film , and as a result , influence on its optical and electrical properties
从上世纪八十年代开始的对vo _ 2的掺杂研究表明:掺杂能明显改变vo _ 2薄膜的相变温度,进而影响其光电性能。 |
