| 1. | Standard slice of single crystal silicon resistivity
硅单晶电阻率标准样片 |
| 2. | Monocrystalline silicon polished wafers
硅单晶抛光片 |
| 3. | Measuring of minority - carrier lifetime in silicon single crystal by photoconductive decay method
用光电导衰减法测量硅单晶中少数载流子的寿命 |
| 4. | Practice for conversion between resistivity and dopant density for boron - doped and phosphorus - doped silicon
掺硼碜磷硅单晶电阻率与掺杂剂浓度换算规程 |
| 5. | Finally , the effect of rapid thermal process ( rtp ) on oxygen precipitation in hb is investigated in this paper
最后文章还系统研究了快速热处理( rtp )对重掺硼硅单晶中氧沉淀的影响。 |
| 6. | Eliminating the nitrogen - oxygen complexes by rtp has not only creativity , but also have a significant practice sense
对rtp消除微氮硅单晶中氮氧复合体的研究，不仅具有创新性，而且具有重要的实践意义。 |
| 7. | Adopting ni / si and tin / ni / si structure , the nisi film on the < 100 > si substrate by the means of rta has been demonstrated in detail
文中详细的阐述了采用ni si和tin ni si结构通过rta在硅单晶< 100 >衬底上制备nisi薄膜的方法。 |
| 8. | The experimental results showed that high density of oxygen precipitation and induced - defects were formed after annealing of wafers at moderate and high temperatures
重掺砷硅单晶在中高温退火时形成密度较高的氧沉淀及诱生缺陷。 |
| 9. | Testing of materials for semiconductor technology - measurement of carrier lifetime in silicon single crystals - recombination carrier lifetime at low injection by photoconductivity method
半导体工艺材料的试验.硅单晶中载流子寿命的测量.用 |
| 10. | The nucleation temperature of oxygen precipitation is about 750 c in lightly doped czsi , while the nucleation in heavily as - doped si occurred at a higher temperature ( 750 - 900 c )
普通直拉硅氧沉淀在低温750形核，重掺as硅单晶形核温度较高，在750 - 900之间。 |
