| 1. | Silicon and germanium, for instance, have forbidden bands whose widths are 1. 1 and 0. 65ev, respectively .
例如，硅和锗的禁带宽度分别为11电子伏和065电子伏。 |
| 2. | The band gap calculation of wide - gap ternary compound nitride semiconductors in group
族宽禁带含氮三元混晶半导体禁带宽度的计算 |
| 3. | Modulation on widening photonic forbidden band of one - dimensional photonic crystal by optical thickness
光学厚度对一维光子晶体禁带宽度的调制 |
| 4. | Silicon and germanium , for instance , have forbidden bands whose widths are 1 . 1 and 0 . 65ev , respectively
例如，硅和锗的禁带宽度分别为1 1电子伏和0 65电子伏。 |
| 5. | Tin sulfide ( sns ) has an optical band gap of 1 . 3ev , which is close to the optimal band gap 1 . 5ev
Sns的光学直接带隙为1 . 3ev ,接近于太阳能电池材料的最佳禁带宽度1 . 5ev 。 |
| 6. | Bulk silicon , with indirect band gap of 1 . 12 ev , does n ' t emit visible light at room temperature
本体硅为间接禁带半导体，且禁带宽度比较窄( 1 . 12ev ) ，在室温下很难发可见光。 |
| 7. | But the seebeck coefficient was reduced by pd - substituted because of the interdict band width was reduced
Pd的取代也同时使zrnisn基化合物的禁带宽度减小，降低了体系的seebeck系数。 |
| 8. | In order to implement photo - catalysis in common condition , the band gap must be decrease . doping is a good measure
为了实现自然条件下的光催化，需要降低tio _ 2禁带宽度，掺杂则是一种较好的措施。 |
| 9. | In this paper the band - gaps of the different concentration ge - doped czsi were measured , and the band - gap numbers were gotten
论文中对硅锗单晶的光学禁带宽度进行了测试，得出了掺锗不同浓度下禁带宽度值。 |
| 10. | The mechanism of the luminescence has been discussed . bulk silicon , with indirect band gap of 1 . 12ev does n ' t emit light at room temperature
本体硅为间接禁带半导体，且禁带宽度较窄，室温下很难发光。 |
