| 1. | To minimize channeling effects, the gaas target should be misaligned from the axis of the beam .
为了使沟道效应最小，GaAs靶应稍偏离离子束的轴向。 |
| 2. | In addition, average angular information is taken from adjacent segments and the incident ion beam .
另外，可以从邻近线段和入射离子束取得平均角度的信息。 |
| 3. | Ni ion beam enhanced deposition of nitride film
镍离子束动态增强沉积多元氮化物膜 |
| 4. | A miniature intense pulsed ion beam accelerator
一台小型强流脉冲离子束加速器 |
| 5. | Mutant breeding l - argining - producing bacterium by n beam
精氨酸产生菌的离子束诱变育种 |
| 6. | Generic specification of ion beam etching system
离子束蚀刻机通用技术条件 |
| 7. | Formation of la silicides by mevva ion implantation
源离子束合成镧硅化物 |
| 8. | Reactive ion beam etching system ribe system
反应性离子束蚀刻系统 |
| 9. | Experimental study on the generation of intense pulsed ion beams
强流脉冲离子束产生的实验研究 |
| 10. | Metal plasma immersion dynamic ion beam enhanced deposition
金属等离子体浸没动态离子束增强沉积 |
