The common method used by domestic and foreign scientists is removing the cobalt from the surface of the substrate by etching substrate using thin acid solution at room temperature . but the internal co will still overflow during mpcvd 为降低成核及成膜过程中钴的副作用，国内外通常采用的方法是将硬质合金基体在室温下用稀酸溶液浸泡一定时间，从而除去基体表面的钴。
