High surface hole concentration p - type gan using mg implantation 应用mg离子注入获得高表面空穴载流子浓度p -型gan
2.
Conformed by van der pauw hall measurement after annealing at 800 for 1h . this is the first experimental report of mg implantation on mg - doped gan and achieving p - type gan with high surface hole concentration 的p -型gan 。首次报道了实验上通过mg离子注入到mg生长掺杂的gan中并获得高的表面空穴载流子浓度。
