| 1. | The amplifying amplitude for the electronics system wi
而主要是高能粒子引发单粒子效应。 |
| 2. | Laser simulation of single event effects
单粒子效应激光模拟试验技术研究 |
| 3. | Approaches to study single event effects induced by high energy protons in devices
高能质子引起器件单粒子效应的研究方法 |
| 4. | Leading particle effect
领先粒子效应 |
| 5. | The single event effect ( see ) of space microelectronic devices has been studied
本工作进行了空间微电子器件单粒子效应研究。 |
| 6. | The effect of the mean field part is similar to that of non - magnetic impurities while the many - particle effect decreases rapidly as temperature increases . from an analytic treatment , connection between the kondo resonance induced by the magnetic impurity and the nanotube parameter is discussed
根据微扰展开的思想,磁性杂质的影响分为平均场效应部分和多粒子效应部分,计算表明前者的作用与非磁性杂质相似,后者的影响随着温度升高急剧减小。 |
| 7. | The research on the radiation effects of materials induced by high - energy proton irradiation is of important significance in many scientific fields , such as the single event effects of semiconductor components exposed on space , accelerator - driven nuclear energy generator , tritium production by accelerator , intense pulsed ion beam technology , proton radiography , etc . the effects and mechanisms of irradiation vary vastly for different energies and intensities of proton beams
宇宙高能质子的单粒子效应( see )研究、洁静核能系统( ads )研究、加速器产氚计划( apt ) 、强脉冲离子束( ipib )技术、质子断层扫描等领域都涉及质子辐射效应问题。质子辐射对不同的材料会导致不同的效应，开展质子辐射效应产生的机制研究，掌握其效应规律，对于电子学元器件的抗辐射加固指标提出，以及在其他研究中的方案设计等都有重要意义。 |
| 8. | Nuclear reaction is the important mechanism for causing single event upset as well , especially for high - energy protons . all the formula needed for simulating proton - induced radiation effects are deduced . to bypass the obstacle of lacking nuclear reaction parameters of high - energy protons interacting with silicon , the author successfully obtained the necessary nuclear reaction cross sections by combining an intranuclear cascade nuclear reaction model with monte - carlo simulation , which are applied to the calculation of seu
整理、推导了数值模拟所需要的计算公式及连续慢化近似下的输运方程，自行编制了辐射屏蔽计算程序、单粒子效应计算程序、热?力学效应计算程序，并对所有计算程序进行了对应的验算，计算结果与公开发表的理论或实验结果相符合。 |
| 9. | Nuclear scattering results in the displacement defects in material as well as the deflection of proton from its incident direction ; electronic stopping of protons acts as the most important factor in the degradation of incident proton energy , resulting in electronic effects such as single event upset
核散射是导致入射质子运动方向改变以及缺陷产生的主要因素，入射质子与核外电子云的作用是高能质子在材料中慢化的主要因素。核反应在宇宙高能质子引起的单粒子效应中有重要影响。 |
| 10. | This paper deals with the monte carlo simulation of high - energy protons transport in silicon , in which the intra - nuclear cascade model is used to deal with proton nuclear reaction process . and the results of radiation effects of proton in silicon and p - seu ( proton induced single event upset ) cross section of some electronic devices are presented
本文用蒙特卡罗方法对高能质子(最高能量在500mev以上)在硅材料中的输运过程进行了模拟，作了用核内级联模型计算质子核反应的尝试，计算了质子对硅材料的辐射效应及其对硅器件的单粒子效应。 |
