| 1. | They spontaneously emit light to return to a lower level
接著它们会自发性地放光而回到较低的能阶。 |
| 2. | Deep level transient spectroscopy
深能阶暂态光谱学 |
| 3. | Whenever gas absorbs light , electrons within the atoms jump from a low energy state to a higher one
当气体吸收了光，原子内的电子就会自低能阶跃迁到较高的能阶。 |
| 4. | An interesting proposal for using mid - gap levels to improve device performance ( see also the next reference
一篇使用中能隙能阶提升元件性能的有趣方法(亦见下一篇参考论文) 。 |
| 5. | In particular , he realized that atoms can become excited ? that is , jump to a higher energy level ? if they absorb light
特别是他了解到原子在吸收光之后可以变成激发状态（也就是跳到较高的能阶） 。 |
| 6. | There was not a mechanic among them ; these were scientists , and their conversations buzzed with talk of spectrums and quantum levels , not gears and escapements
他们之中没有人是技工；他们全是科学家，开口闭口都是量子能阶与频谱，而不是齿轮或者擒纵器。 |
| 7. | These energy levels are determined by how tightly the atomic nucleus holds the electrons , which depends on the strength of the electromagnetic force between them ? and therefore on the fine - structure constant
能阶是由原子核拉住电子的松紧程度所决定，而这又取决于能阶之间的电磁力强度，因此便和精细结构常数关系密切。 |
| 8. | Hfets ( modulation doped ) : modfets ? basic device , theory . deep level problem ( transconductance collapse ) ; pseudomorphic solution . telecommunications applications ? key features : gain , bandwidth , linearly , noise
调节掺杂场效电晶体-基本元件，理论。深能阶问题(电导崩塌)与假晶方案。通讯应用-主要特点：增益，频宽，线性度，杂讯。 |
| 9. | For the requirement of more negative differential resistance ( ndr ) routes , three split quantized energies are formed in the four - period inp / ingaas superlattice structure with relatively thin ingaas quantum wells under ideal flat - band condition , and high - field domain in the superlattice is formed under sufficiently large operation bias
为获得?多轨迹的负微分电阻，本研究组件使用?相当薄之砷化铟镓?子井，可使四周期磷化铟/砷化铟镓超晶格结构在平带情况下形成三个分?的?子化能阶，且于足够大的操作偏压下在该超晶格结构中形成?高场区域。 |
| 10. | The major research interest covers a broad range of topics concerned with the fundamental properties of shallow - levels in semiconductors and with impurity related issues of importance to semiconductor physics and technology , e . g . , single and multiple donors and acceptors , shallow excited states of deep - level impurities , defect interaction on the atomic scale such as impurity - pair or complex formation
主要研究方向涵括半导体物理与技术方面有关杂质之重要领域，例如施者与受者杂质、浅与深杂质、杂质能阶、杂质光谱、杂质与杂质或缺陷相互间之交互作用，以及复合杂质之形成与特性等。 |
