Chinese translation for "薄膜电容"
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- thin film capacitor
Related Translations:
薄膜器件: thin film devicethin-film device 无序薄膜: disordered thin film
- Example Sentences:
| 1. | V2a pc poly carbonated film capacitor
V2a pc聚碳酸酯薄膜电容polycabonate | | 2. | Ceramic caps with any other dielectric other than npo should only be used for bypass applications
任何不是npo的其它介质的薄膜电容，应只能被用于旁路。 | | 3. | For many applications thin - film resistors and capacitors offer certain distinct advantages over their junction counterparts
在许多场合，薄膜电阻、薄膜电容与结电阻、结电容相比有一些明显的优点。 | | 4. | Platinum is more suitable in forming the bottom electrode of bst capacitor than gold , but the top electrode and transmission lines prefer to gold
铂比金更适合作为移相器中bst薄膜电容的下电极，而上电极和传输线导体材料则选用金。 | | 5. | In 1998 , epcos added a 45 million usd investment in zhuhai to establish their ceramic components and film capacitor production plant in zhuhai ' s free trade zone
1998年，爱普科斯增资4500万美元，在珠海保税区投资建设了生产陶瓷类元件及薄膜电容的保税区工厂。 | | 6. | After the analysis of some structures commonly used in dielectric phase shifter , a new structure named distributed capacitor - loaded phase shifter was carried out . it is comprised of a high - impedance transmission line periodically loaded with bst ( baxsr1 - xtio3 ) thin film capacitors
在对现有的几种薄膜介质移相器结构进行分析的基础上，提出了一种新型的分布式电容负载型薄膜介质移相器结构，它由高阻传输线和周期性负载的钛酸锶钡薄膜电容构成。 | | 7. | It is capable to lower the insertion loss by using high conductivity electrode material and increasing the electrode thickness and quality factor of bst capacitor . at the same time increasing the tunability of the dielectric constant and the length of the transmission line can increase the phase shift
通过使用高电导率的电极材料、增加电极的厚度、提高bst薄膜电容的q值可以实现器件插损的降低；增大薄膜的介电系数变化率和传输线长度可以增加移相度。 | | 8. | Among various fabrication techniques of thin film , the sol - gel process has gained much interest for the preparation of pzt thin film , due to ihe advantages of good homogeneity , easy control of composition , low in - ill i reaving temperature , easy formation of large area thin films pb ( zrxti : - k ) 0 : , ( pzt ) films were prepared on the ito coated glass plates and low resistor silicon wafer in sol - gel dip - coating process associated wi di heat treatment : at different temperatures and characterized by x - ray diffraction ( xrd ) and transmission electron microscopy ( tem ) . lt is shown that the pzt ferroelectric thin films with ( 110 ) preferred orientation and well - crystallized perovskite structure can be obtained after annealing at 680 ? for 30 minutes on ito substrate and at 800 " c for lornin on silicon substrate
Pzt的制备方法有很多，其中溶胶?凝胶( sol - gel )方法可以和集成电路( ic )光刻工艺相互兼容，处理温度低，有大面积涂敷性能，能精确地控制组分，无需复杂的真空设备，成本低廉，所以对于集成铁电薄膜电容的应用这种方法有很广阔的前景。本文利用sol - gel技术在掺锡的in _ 2o _ 3透明导电薄膜( ito )衬底和低阻硅衬底上成功地制备了pzt铁电薄膜。运用了x射线衍射， sawyer - tower电路和lcr电桥分别对薄膜的晶化温度，结构和电学性能进行了测试。 |
- Similar Words：
- "薄膜电雷管" Chinese translation, "薄膜电路" Chinese translation, "薄膜电路学" Chinese translation, "薄膜电路组装" Chinese translation, "薄膜电热元件" Chinese translation, "薄膜电容器" Chinese translation, "薄膜电容器公司" Chinese translation, "薄膜电位" Chinese translation, "薄膜电位系数" Chinese translation, "薄膜电泳" Chinese translation
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