High leakage currents and soft reverse current - voltage characteristics are some of the detrimental effects produced by the metal atoms dissolved in the silicon matrix . gettering procedures can reduce metal contamination 由于金属杂质原子扩散并沉积在器件的有源区,会造成诸如:反向漏电流较大,反向击穿电压是软击穿等有害的影响。