Chinese translation for "通态"
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- on state
onstate
- Example Sentences:
| 1. | Mean on state current 平均通态电流 | | 2. | The performance of state - of - the art silicon pin diodes is now approaching the theoretical limits , and it is apparent that further advances in silicon technology are very difficult because of material properties 传统的sipin功率二极管由于si材料特性的局限性,很难实现开关速度、通态压降和反向漏电流三者良好的折衷。 | | 3. | Compared with phase - shift control , pwm plus phase - shift control can reduce the current stresses and rms currents of the converter . the loss of the converter can also decrease . lt is proved the converter can achieve zvs in larger load variation 与常规相移控制方式相比, pwm加相移控制方式能减小变换器的电流应力,减小通态损耗,同时也能拓宽零电压开关的范围,使变换器在较宽的负载变化范围内都能实现软开关。 | | 4. | We call it : low power loss igbt - - - - - - lpl - igbt . experimenal results and simulation results have shown that this new structure provides a better performance than that of the conventional npt structure . its power loss is lower than npt - igbt and other parameters are the same as those of npt - igbt 它的总损耗(通态损耗与开关损耗之和)低于现有npt - igbt ,而其余性能(耐压、电流密度、安全工作区、抗过流、过压能力等)和制造成本与现有npt - igbt相同。 | | 5. | By compared with the simulation results and the experiment results , we come to the conclusions that : ( 1 ) circuit with assistant network can widen soft - switching extent in lagging arm , reduces duty - cycle loss on the secondary , diminishes switching dissipation of inverter spot - welding power source . ( 2 ) the range of resonant capacitor , the important factor to soft - switching process , not only affects zero - voltage turn - off of power switches , but also affects the range of zero - voltage turn - on of power switches . so resonant capacitors must be considered according to many aspects ; ( 3 ) it easily fulfils soft - switching condition in lagging arm as leakage inductance of power transformer increases , but bigger leakage inductance of power transformer increases opening dissipation of transformer and decreases efficiency of soft - switching inverter power source 通过仿真结果与软开关点焊逆变器试验结果的对比分析,得到了如下主要结论:采用辅助网络可以完全拓宽全桥软开关逆变器的滞后桥臂软开关范围,减小了次级占空比丢失,降低了逆变电阻点焊电源的开关损耗;谐振电容是影响软开关工作状态的重要因素,其大小不仅影响开关管的零电压关断,同时也影响开关管的零电压开通范围,因此,谐振电容应该综合考虑;功率变压器漏感越大,越容易满足滞后桥臂的软开关条件,但是大的漏感也使变压器的通态损耗增加,降低了软开关逆变器的效率。 | | 6. | The vertical structure optimization through simulation of the new structure , low loss igbt ( lpl - igbt ) has been discussed in detail in this paper . in comparison with the prevalent igbt , lpl - igbt has not only the merit of transparent back emitter and high lifetime of carriers owned by npt - igbt but also the complex n7n + voltage sustain layer structure owned by pt - igbt . not only possesses lpl - igbt lower power loss but also the other capacities are no better than npt - igbt such as break down voltage , current capacities , safe operation area and cost 与现有igbt相比较, lpl - igbt在结构上保留了npt - igbt中的透明发射区和高载流子寿命的本质优点,同时又具有pt - igbt中n ~ - n ~ +复合薄耐压层的优点;在器件性能上, lpl - igbt不仅具有比npt - igbt更低的能量损耗(包括通态损耗和开关损耗) ,而且其余性能如器件耐压、电流密度、安全工作区以及制造成本等相对现有npt - igbt均有明显改善。 | | 7. | Firstly , the basic theory of full - bridge phase - shift zvs pwm converters are expatiated and another three kinds of circuits of full - bridge phase - shift zvs pwm converters are discussed . there are four kinds of problems which are emphasized : how to expand the zvs range ; how to reduce the circulation in the primary side of the transformer in order to minimize the on state losses ; how to decrease the loss of effective duty circle and how to eliminate the parasitic oscillation of the output rectifiers 本文首先分析了基本的全桥移相zvsdc dc变换器的工作原理,为解决滞后桥臂不易实现零电压开关( zvs )的情况,讨论了另外三种全桥移相zvsdc dc变换器的电路拓扑,重点分析并解决了四个方面的问题:如何扩大zvs的负载范围;减小变压器原边环流,降低变换器系统通态损耗;减少变压器次边有效占空比丢失;消除输出整流二极管的寄生振荡。 | | 8. | The researching results indicate that using the two kinds of novel structure , the fast - switching and the soft recovery characteristics of the device are much improved but not notable changed in forward drop , and the temperature characteristic is improved , too . most of the characteristics are far better than the normal pin diode structures 研究结果表明,在采用?基区渐变掺杂和台面结构后的p ~ + ( sige ) - n ~ - - n ~ +异质结中,我们得到了更快而软的反向恢复特性,和更低通态压降的正向导通特性,且温度特性也有明显改善。 | | 9. | Unfortunately , though the lifetime control technology reduces the stored charge , it increases the forward voltage drop ( vr ) and the reverse leakage current ( i , ) . therefore , si pin diode cannot realize a good trade - off in qs - vf - i , - . the appearance of sige material and sige / si hetero - junction technology has changed this situation 但少子寿命控制技术在减少存贮电贺q _ s的同时,也增大了正向通态压降v _ f ,和反向漏电流i _ r ,因此很难实现qs - v _ f - i _ r三者良好的折衷关系。 |
- Similar Words:
- "通台元记贸易行股份有限公司" Chinese translation, "通泰" Chinese translation, "通泰报关行" Chinese translation, "通泰里" Chinese translation, "通泰贸易股份有限公司" Chinese translation, "通态电流" Chinese translation, "通态电流临界上升率" Chinese translation, "通态电压" Chinese translation, "通态电阻" Chinese translation, "通态方均根电流" Chinese translation
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