| 1. | The result is showed that the value of square resistence is 30 . 2 o in heavily doping area and 100 . 2o in lightly doping area
实验结果显示，重掺杂区和轻掺杂区的平均方块电阻分别为30 . 2和100 . 2 ，相差70 。 |
| 2. | The abrupt heterojunction diode is composed of a 1 m thick heavily doped n - type sic layer and a 0 . 4 m thick lightly doped p - type sic1 - xgex layer with varied composition ratios
在这个异质结中， n型重掺杂3c - sic层的厚度为1 m ， p型轻掺杂sicge层厚度为0 . 4 m ，二者之间形成突变异质结。 |
| 3. | In the experiment we also observed negative differential resistance characteristics of gesi hbts with heavily doped base at high collector - emitter voltage and high current . a new interpretation to this phenomenon was given . this
在实验中我们还观察到，在高vce和大电流下，重掺杂基区gesihbt出现负阻现象，我们对这一现象进行了新的解释，认为这是由热电负反馈导致的。 |
| 4. | The n / n + and p / p + epitaxial structures , which become popular with the development of coms technology , because they can avoid the latch - up and a softerror of ulsi while they combined with the intrinsic gettering ( ig ) technique
Coms工艺中普遍采用n / n ~ + 、 p / p ~ +的外延结构，这种以重掺杂硅片为衬底的外延结构与内吸杂工艺相结合，是解决集成电路中的闩锁效应和粒子引起的软失效的有效途径。 |
| 5. | But there are still several problems concerning the stability and reproducibility of device fabrication . the heavily born doped p - type diamond films synthesized by hot filament chemical vapor deposition with b ( ch3 ) 3 as boron source substituted the metal electrode aluminum
本文还利用热灯丝化学汽相沉积( hfcvd )法，采用硼酸三甲酯b ( ch3 ) 3为硼源制备了重掺杂p型金刚石膜，作为lppp / alq异质结增强型发光器的电极。 |
| 6. | As far as the new technology of selective diffusion , the method of printing is used and the phosphoric paste ( high concentration ) is printed at the electrode - site in silicon . afterwards , a thin layer of phosphoric source ( low concentration ) is sprayed on the surface of the non - electrode - site in silicon
在选择性扩散新工艺中，我们采用丝网印刷电极的方法在硅片的电极位置印刷浓度较高的磷浆(掺磷sio _ 2乳胶) ，在非电极区喷涂一层浓度较低的磷源，扩散后形成重掺杂和轻掺杂。 |
| 7. | According to our theoretic analysis and the realistic fabricating condition , the boa device with double - heterostructure gaas / gaalas has been proposed to obtain 3db bandwidth greater than 2 . 5 ghz , half - wave voltage about 5v , extinction - ration less than - 40db , transmission loss of tm mode greater than 45db and transmission of te mode less than 0 . 15db . to obtain higher switching speed , we proposed that traveling - wave electrode is applied to boa device
我们选择在sigaas衬底上生长重掺杂层，通过控制其厚度来设计速度匹配的boa光开关行波电极，实现boa光开关的高速和高带宽，本文结合boa型光开关的特点提出一种行波电极型boa光开关结构，其理论3db调制带宽大于20ghz 。 |
