| 1. | Common ceramic elements are barium titanate and lead zirconate-titanate .
普通的陶瓷元件分别是钛酸钡和锆钛酸铅。 |
| 2. | Lead zirconate titanate
锆钛酸铅 |
| 3. | The electrical properties of yttrium - modified lead zirconate titanate ferroelectric thin films
钇掺杂锆钛酸铅铁电薄膜的电性能研究 |
| 4. | The electrical properties of cobalt - modified lead zirconate titanate ferroelectric thin films
掺杂钴对锆钛酸铅铁电薄膜电性能的影响 |
| 5. | Research progress of heterostructures of lead zirconate - titanate thin films on silicon substrate
硅基锆钛酸铅铁电薄膜异质结构的研究进展 |
| 6. | The preparation of pzt ferroelectric thin films and its application in pyroelectric ir sensor
锆钛酸铅铁电薄膜的制备及在红外探测器中的应用 |
| 7. | In our experiment , the structure of the pzt thin film sample is pt / pzt / ybco / lao . lao is the substrate
本文基于前人的实验理论，率先研究了锆钛比为94 6的锆钛酸铅薄膜的性能。 |
| 8. | 0 - 3 pzt / pvdf piezoelectric composite is a kind of piezoelectric material , which integrates with merits of pzt and pvdf respectively and counteracts deficiencies of them . so , it is used widely in every fields of modem social life
0 ? 3型pzt / pvdf压电复合材料是一种综合了锆钛酸铅( pzt )和聚偏二氟乙烯( pvdf )的自身优点，弥补它们自身缺陷的一类压电材料，因而广泛地应用于现代社会生活中。 |
| 9. | Furthermore , on the basis of adopting pzt ( lead zirconium titanate ) as the switched - capacitor dielectric , the output current of a single circuit unit is eight times as large as that of the former single circuit unit with identical technology process parameters
针对采用锆钛酸铅铁电薄膜( pzt )作为开关电容介质的设想，在工艺参数不变的情况下，计算机仿真结果表明，其单个单元电路输出电流可提高7倍。 |
| 10. | In recent years , lead zirconium ti tanate pb ( zrxtii - ? on , ( pzt ( x / l - . x ) ) ferroelectric thin films have been extensively applied to many high - tech fields because of their excellent ferroelectric properties such as high dielectric constant , low dissipation factor , nonvolatility and so on
锆钛酸铅( pzt )薄膜具有优良的介电、铁电、压电和光电特性，且抗辐射性强，不挥发，已广泛地应用于微电子，集成光学和微机械系统( mems )等高技术领域。 |
