| 1. | Analytical threshold voltage model for fully depleted soi mosfets
阈值电压解析模型 |
| 2. | An analytical model for threshold voltage of grooved - gate mosfet ' s
的阈值电压解析模型 |
| 3. | The main works and creative methods are as follows : 1
研究了阈值电压对电路的性能和功耗的影响。 |
| 4. | An analysis of voltage temperature parameter of high - voltage ldmos threshold value
阈值电压的温度系数分析 |
| 5. | Mosfet ; radiation effects ; threshold voltage shift ; radiation sensitivity
Mosfet阈值电压漂移辐照效应辐照敏感性 |
| 6. | Simulating threshold voltage shift of mos devices due to radiation in the low - dose range
低剂量辐照条件下的mosfet因辐照导致的阈值电压漂移的模拟 |
| 7. | This peak voltage setting becomes the threshold used for calculation of the voltage response curve for the instrument
这个峰值电压设置为阈值电压，用来计算仪器的电压响应曲线。 |
| 8. | The influence of the flexoelectric effect on the threshold voltage , the saturation voltage and the symmetry breaking parameter is discussed and calculated carefully
挠曲电效应对阈值电压、饱和电压和对称性破缺参量有重要影响。 |
| 9. | With the development of integrate circuits and increasing of the integration , the research of the threshold voltage uniformity is becoming more and more important
随着gaas集成电路的发展，集成度的提高，对gaas单晶阈值电压均匀性的要求越来越高。 |
| 10. | Problems about fabrication of sige - oi substrate , low - temperature gate oxidation and source / drain ion implantation are discussed after considering technology level and reported articles
然后用二维模拟软件medici模拟,得到器件的阈值电压约为- 0 . 1v ,泄漏电流很小。 |
