| 1. | Input current at positive - going threshold voltage
正向阈电压下输入电流 |
| 2. | Positive - going input threshold voltage
正向输入阈电压 |
| 3. | Standard test method for measuring mosfet linear threshold voltagemetric
测量mosfet线性阈电压的标准试验方法 |
| 4. | Positive - going threshold voltage
正向阈电压 |
| 5. | However , it becomes independent on channel depth in strong inversion region , which is in accordance with numerical analysis
结果进一步显示，只考虑方形势阱的量子力学结果，略高估计了阈电压，且低估了电子密度。 |
| 6. | Then , an implicit expression for electron density and a closed form of threshold voltage are presented fully comprising quantum mechanical ( qm ) effects
给出了电子密度的隐式表达式和阈电压的显式表达式，它们都充分考虑了量子力学效应。 |
| 7. | The analytical solutions to 1d schr ? dinger equation ( in depth direction ) in double - gate ( dg ) mosfets are derived to calculate electron density and threshold voltage
摘要推导了双栅mosfet器件在深度方向上薛定谔方程的解析解以求得电子密度和阈电压。 |
| 8. | We also , discuss the features of a single charge soliton in detail , such as peak potential , peak width , threshold voltage and their dependences on the array parameters
文中还详细讨论了单电荷孤子的峰高、峰宽和阈电压等方面的特征以及它们随结链结构参数的依赖关系。 |
| 9. | Standard test method for separating an ionizing radiation - induced mosfet threshold voltage shift into components due to oxide trapped holes and interface states using the subthreshold current - voltage characteristics
利用亚阈值安伏特性测定由于氧化空穴和界面态产生的电离辐射感应金属氧化物半导体场效应晶体管阈电压偏移分量的标准试验方法 |
