It is assumed that electron tunneling from silicon into oxide and buildup of interface states are the post - irradiation recovery 假设隧道电子从硅进入氧化层和界面态的建立是辐射效应的恢复机理。
2.
It shows that the bias in the post - irradiation recovery period and the ratio of the interface state to the electron tunneling influence the recovery rate 模拟结果表明：退火过程所加栅偏压的大小以及隧道电子效应与建立的界面态所占比例的不同影响器件的恢复率。
