| 1. | Deposition and etching of amorphous carbon films in ecr plasma
离子体沉积和刻蚀非晶碳薄膜 |
| 2. | Structure and properties of ta - c films deposited by filtered cathodic vacuum arc technology as a function of substrate bias
衬底偏压对四面体非晶碳膜结构和性能的影响 |
| 3. | In charter ii , the data of sem , x - ray diffraction and raman spectroscopy were used to characterize the structure of a - c
其中第二章从表面形貌、 x射线衍射、 raman散射光谱等多方面阐述了非晶碳的研究手段和一般特征。 |
| 4. | The influence of adjusting the laser spot size at the target on the growth of a - c was analyzed in charter iv , and a suit spot size was found
第四章研究了激光束聚焦对非晶碳膜生长的影响，并找到了合适的激光束直径。 |
| 5. | Super - hard amorphous carbon films were deposited on such substrates as single - crystalline silicon and k9 glass by pulse laser ablating graphite target
本文研究用脉冲激光烧蚀石墨靶方法在单晶硅、 k9玻璃等衬底上生长超硬非晶碳膜。 |
| 6. | As an environmentally benign and economically viable optoelectronic device material , amorphous carbon ( a - c ) films are of interests in various applications
作为一种经济适用并且环境友好的光电器件材料,非晶碳薄膜因其众多优良的特性而引起广泛研究兴趣。 |
| 7. | It is thought that the emission process happened with the participation of diamond crystal , graphite , amorphous carbon and intra - face states in the diamond films
认为非晶碳、石墨、金刚石及相应界面态构成一个完整的体系参与场发射，金刚石薄膜中杂相的存在有利于电子的场发射。 |
| 8. | The results show that amorphous carbon films have high etching resistance against oxygen plasma , and etch rates of the films correlated not only with etching processing parameters , also with deposition conditions
结果表明非晶碳膜对于氧离子体具有高的抗刻蚀性，其刻蚀率不仅与刻蚀的过程参量有关，而且决定于膜的沉积条件。 |
| 9. | Ion - assisted bombardment and direct current bias were emphasized in charter ii and charter iii respectively on studying how external factor as an assisted avenue can influence the growth of amorphous carbon film
第二章和第三章分别从引入离子轰击和施加直流偏压电场两方面着重研究了外界条件作为辅助手段对非晶碳生长的影响。 |
| 10. | The charter v studied the absorption character ultraviolet and infrared light for a - c films on both glass and single crystalline silicon . though amorphous carbon had quite lower absorption , it was suit to be made as a transmittance - increasing layer on silicon in range of wavelength shorter than 8 m
第五章研究了玻璃和单晶硅衬底上非晶碳对紫外和红外光的吸收特性，发现非晶碳适应于制作硅衬底上波长短于8微米的红外增透兼保护膜。 |
