| 1. | We have also given the equivalent circuit of on - resistance and compute method
本文也给出了导通电阻的等效电路及计算方法。 |
| 2. | The on - resistance of the synchronous rectifier is as low as 0 . 4 ? . it has a very high efficiency even in the light load thanks to its low quiescent supply current
整个芯片具有极低的静态电流,使得此芯片即使在轻载的时候也有很高的效率。 |
| 3. | Power mosfets on - resistance will have a - ve temp coef and not + ve at low current levels . this is important to remember when paralleling devices
功率mosfets导通电阻有负温度系数，小电流时有正系数。当并联这些器件的时候记住以上很重要。 |
| 4. | The research of the effect of soi s - resurf included the impact of the geometry parameters and drift doping concentration on breakdown voltage and on - resistance
Soisingle - resurf效应研究。研究了soisingle - resurfldmos的器件参数对击穿电压和导通电阻的影响。 |
| 5. | This family s characteristics include a maximum blocking voltage of 600v , maximum current handling capability of 140ma and low on - resistance of 22 ohms . these 4 - pin devices are offered in both dip and surface mount packages
福华先进微电子是以soc实体ic与平台方式开发产品之应用及方案，同时提供平台式的设计方法，支援客制化的晶片实现服务。 |
| 6. | Comparing with conventional resurf structure , the novel structure has only half the device length and 1 / 3 of the on - resistance as well as comparable breakdown voltage . we have also done some worked on the soi composite structure
通过将tsoi结构的ldmos与常规resurf结构soi - ldmos的比较，在同等耐压下采用新型结构的器件长度缩短了1 / 2 ，比导通电阻降低了2 / 3 。 |
| 7. | In the model of on - resistance , we have considered the lateral doping distribution in ldmos channel and vertical doping distribution in drift region . then we provide the explicit dependence between on - resistance and doping distribution parameter
导通电阻模型考虑了ldmos的沟道横向杂质分布和漂移区杂质纵向分布的结构特点，给出了导通电阻与杂质分布参数的明确函数关系。 |
| 8. | In lately 20 years , many new structures and technologies have been developed . however , the tradeoff of breakdown voltage with specific on - resistance is always being researched . this thesis was supported by the key program of national natural science foundation of china
近二十年来,众多学者提出了很多种器件结构和技术,为soi高压器件的发展做出了贡献,但是soi的耐压和导通电阻的折衷问题一直是无法忽略的。 |
| 9. | It ought to be compatible with low - voltage circuit process and satisfy requirement of high - voltage and large current this paper deeply discusses threshold voltage , on - resistance and current characteristic of ldmos , and builds the approximately accurate model of these electrical parameters
本文讨论的ldmos结构是pdp选址驱动芯片设计的一个关键问题，该结构实现了与低压电路工艺的兼容，并满足耐压高、电流大的实际需要。 |
| 10. | Author analyzed the relationship between the length and the impurity concentration of drift region and thickness of buried oxide layer and thickness of soi and the charges of oxide layer and bias voltage of bulk and breakdown voltage and on - resistance by numerical simulation
采用数值模拟分析方法,深入研究了漂移区长度、漂移区浓度、埋氧层厚度、顶层硅厚度、氧化层电荷以及衬底偏压对resurf效应、击穿电压和导通电阻的影响。 |
