| 1. | Error analysis of resistance indication of earth - continuity tester
接地导通电阻测试仪电阻示值误差分析 |
| 2. | Earth - continuity testers
接地导通电阻测试仪 |
| 3. | We have also given the equivalent circuit of on - resistance and compute method
本文也给出了导通电阻的等效电路及计算方法。 |
| 4. | The difficulty of this circuit lies in the high requirements of leakage current and on resistance
整个电路难度主要在于漏电流和导通电阻的要求比较高。 |
| 5. | Power mosfets on - resistance will have a - ve temp coef and not + ve at low current levels . this is important to remember when paralleling devices
功率mosfets导通电阻有负温度系数，小电流时有正系数。当并联这些器件的时候记住以上很重要。 |
| 6. | The research of the effect of soi s - resurf included the impact of the geometry parameters and drift doping concentration on breakdown voltage and on - resistance
Soisingle - resurf效应研究。研究了soisingle - resurfldmos的器件参数对击穿电压和导通电阻的影响。 |
| 7. | The two structure ldmos was compared by simulation with medici software . the result is that their breakdown voltage is almost the same and the thin epitaxial layer ldmos ? ron is lower
通过medici模拟对两种器件进行比较，结果为两种器件耐压相当，薄外延ldmos导通电阻略低。 |
| 8. | With leds series connected , accurate current regulation for uniform illumination can be obtained . the circuit includes a 30v , low rdson n - channel mosfet switch for high efficiency up to 84 % and maximum battery life
内置耐压30v的低导通电阻n沟mosfet开关使电路能获得高达84 %的效率,延长了电池使用寿命。 |
| 9. | Comparing with conventional resurf structure , the novel structure has only half the device length and 1 / 3 of the on - resistance as well as comparable breakdown voltage . we have also done some worked on the soi composite structure
通过将tsoi结构的ldmos与常规resurf结构soi - ldmos的比较，在同等耐压下采用新型结构的器件长度缩短了1 / 2 ，比导通电阻降低了2 / 3 。 |
| 10. | In the model of on - resistance , we have considered the lateral doping distribution in ldmos channel and vertical doping distribution in drift region . then we provide the explicit dependence between on - resistance and doping distribution parameter
导通电阻模型考虑了ldmos的沟道横向杂质分布和漂移区杂质纵向分布的结构特点，给出了导通电阻与杂质分布参数的明确函数关系。 |
