| 1. | The main factors which affect qw ld thermal characteristics
影响量子阱激光器热特性的主要因素 |
| 2. | Study of optical coatings for high power 808nm quantum well laser through experiments
大功率量子阱激光器腔面镀膜实验研究 |
| 3. | Materials design and grow of strained quantum well lasers with high characteristic temperature
高特征温度应变量子阱激光器材料设计与生长 |
| 4. | Interdiffusion of si and ge atoms during epitaxy growth of ge layer on si studied by raman spectroscopy
分子束外延生长高应变单量子阱激光器 |
| 5. | Optimized layers design for algan gan ingan symmetrical separate confinement heterojunction multi - quantum well laser diode
对称分别限制多量子阱激光器的优化设计 |
| 6. | After got the growth and structure parameters , we had fabricated the laser with these optimal parameters . after a series of operations , we got the semiconductor laser array which was 1cm bar
在确定了mocvd生长940nm量子阱激光器材料的最佳生长参数和结构参数后，我们将这些结果应用于激光器的制作，经过一系列工艺过程，得到条长1cm的半导体激光器阵列。 |
| 7. | So it is easy to regulate parameters to obtain results . in addition , circuit model of quantum cascade laser whose lattice matchs with inp has been structured and some valuable conclusions have been gotten .
对g . rossi提出的多量子阱激光器的电路模型进行了改造，考虑到模型的实用性，模型用多个分支电路来描述，以便在模拟时调整参数的设置相对容易，获得结果更快。 |
| 8. | Based on these analyses , we see that the si - based quantum - dot laser has higher gain and differential gain , its threshold current is more lower and the threshold current is insensitive to temperature when si - based quantum - dot laser compares with normal semiconductor laser and quantum - well laser
分析表明，与普通激光器和量子阱激光器相比， si基量子点激光器有更高的增益和微分增益，阈值电流更低，阈值电流对温度更不敏感。 |
| 9. | Ingaasp long - wavelength quantum well laser is at present appied most extensively in optical fiber communication . structuring its circuit model can optimize the design of the optical transmitter and it is significant to design high - qualitied optical communication system
Ingaasp四元系长波长量子阱激光器是目前在高速光纤通信中应用最为广泛的一类激光源，构建其电路模型有助于完成光发射机的优化设计，这对于高质量的光通信传输系统有非常重要的意义。 |
| 10. | The ingaas / gaas strained quantum well lasers are able to work with extremely low threshold current density , high characteristic temperature and high cod limit , which make ld lasers achieve higher output power and longer ufe . therefore , ingaas / gaas strained quartum wellstructures can be used for the fabrication of high power semiconductor lasers
Ingaas / gaas应变量子阱激光器具有级低的阈值电流密度、较高的特性温度和较高的光学灾变损伤阈值，这使得激光器具有更高的输出功率和更长的寿命。因此ingaas / gaas应变量子阱结构可以用于大功率半导体激光器的制备。 |
