| 1. | 7 . the effect of the mqw on the hb - led is analyzed
全面分析多量子阱结构( mqw )在hb - led中的重要作用。 |
| 2. | The second - order nonlinear susceptibility in semiconductor asymmetric step quantum well structure
半导体非对称阶梯量子阱结构的二阶非线性极化率 |
| 3. | It demonstrates that this structure shows large birefringence that needs more consideration
与此同时，本论文还分析了该量子阱结构的吸收特性。 |
| 4. | Research on energy level properties of symmetric coupled quantum well and optimization for quantum well structures
对称耦合量子阱能级特性研究与量子阱结构优化 |
| 5. | We have grown ingaas / algaas strained quantum well laser by mbe . we studied the doped density in the cladding layer
采用分子束外延设备mbe ( molecularbeamepitaxy )对所设计的应变量子阱结构激光器进行晶体生长。 |
| 6. | 3 . we have analyzed the single layer material , quantum well material and material comprise of superlattice by using kinematics and dynamics in a comparative way
3 .对单外延层结构材料、量子阱结构材料、含超晶格结构材料等，分别应用动力学理论和运动学理论作了对比分析。 |
| 7. | The surface of zncdse / znse qw grown on zno buffered si substrate is free of micro - cracks that is observed on the surface of the sample deposited directly on si substrate
Zncdte znte量子阱结构的表面没有微裂纹，其发光强度较直接在si衬底上生长的zncdte znte量子阱有很大提高。 |
| 8. | The lifetime and mechanics of pl are researched by fl920 time resolved measurement system . it indicated that pl lifetime of quantum dots is greater than those of bulk material and quantum well
利用fl920时间分辨谱测试系统研究了量子点的发光缘由及寿命，发现量子点的发光寿命大于体材料及量子阱结构材料，并且受温度影响较小 |
| 9. | In this dissertation , a novel m - z high speed modulator is proposed , analyzed , fabricated and measured , employing multiple quantum well ( mqw ) structures and traveling wave ( tw ) electrodes to meet the demand of low voltage and wide bandwidth
本论文采用行波量子阱结构来设计40ghz的电光调制器。为实现高带宽，低驱动的要求，本论文着重在量子阱的光学特性和器件的微波特性两个方面进行了深入的研究。 |
| 10. | Hydrogenic impurities in low dimensional semiconductor structures have been studied extensively . electric field applied perpendicularly to the layer of quantum wells can change the optical properties ( abstraction , reflection and photoluminesce - nce ) of semiconductor quantum well structures
而在垂直于量子阱平面的方向外加电场可以显著的改变半导体量子阱结构的光学性质(如吸收、反射、光致发光等) 。 |
