| 1. | So , sbd has been widely used in microwave field
这使得肖特基二极管在微波领域有着广泛的应用。 |
| 2. | Schottky barrier diode ( sbd ) is based on the rectification characteristics of metal - semiconductor contact
肖特基势垒二极管是利用金属半导体的整流接触特性而制成的二极管。 |
| 3. | The concrete work in this thesis : 1 ) fabrication of high response frequency sbd using thin si epi - layer
本文的具体工作可归纳为： 1 )薄硅外延片研制高频肖特基二极管的原型器件。 |
| 4. | B ) sbd was made using the si epilayer as the active layer , qualified with a set of device technology
B )在薄硅外延片的生长基础上，探索制作肖特基二极管的相关工艺，研制高频sbd原型器件。 |
| 5. | 2 ^ algan - based sbd was made using ti / al and au as ohmic contact and schottky contact respectively
2 、利用ti al双层电极作欧姆接触， au电极作肖特基接触，制造出algan基肖特基二极管原型器件。 |
| 6. | Comparing with p - n junction , sbd is a majority carrier device . it has low break - over voltage , and can be used at high frequency
与p - n结相比，它是一种多子器件，具有正向导通电压低，使用频率高等特点。 |
| 7. | B ) a set of device fabrication technology was developed to realize zno sbd . obvious rectifying characteristic was obtained using pt as schottky contact electrode with zno
B )探索适合zno肖特基二极管的制作工艺，选用pt作肖特基电极研制肖特基二极管原型器件。 |
| 8. | C ) after improving the zno sbd , including the device structure and fabrication technology , au / zno / al sbd was fabricated with an improved rectifying characteristic
C )在制作pt zno alsbd的基础上，对znosbd原型器件的结构与工艺进行改进，研制性能更为优异的sbd 。 |
| 9. | 2 ) sbd was made using zno thin film as the active layer , which is a first time attempt . - 2 - a ) first time , high c - axial orientation zno thin film was deposited on al membrane supported on si substrate
A )利用磁控溅射技术，首次在si衬底上，以金属al做过渡层制备具有高c轴取向的zno晶体薄膜。 |
| 10. | The application of mps structure improves the reverse characteristics and preserves the forward characteristics of sbd . and the application of silicon carbide enhances the advantage of mps structure
Mps结构的应用，在保留sbd正向特性的同时，大大提高了其反向特性，而碳化硅材料的应用更加强化了mps的这一优势。 |
