| 1. | State of art - s semiconductor crystal materials
族化合物半导体单晶材料发展动态 |
| 2. | Compound semiconductor materials
化合物半导体材料 |
| 3. | Binary compound semiconductor
二元化合物半导体 |
| 4. | Iii - v semiconductors are important candidate materials for optoelectronic devices
-族化合物半导体是制作固体发光器件的重要材料。 |
| 5. | 5 . a formula is deduced to calculate the built - in voltage of the compound semiconductor
通过推导，得出一个计算化合物半导体异质结内建电势的公式。 |
| 6. | The material quality far lags behind the demands of circuits , and restrains the development of gaas circuits
由于gaas是化合物半导体，要获得完美的单晶十分困难，材料质量远远落后于电路的要求，严重制约着电路的发展。 |
| 7. | Plasma etching has been widely used in the etching process of si devices . now the study is focused on the microfabrication of compound semiconductor
等离子体干法刻蚀在硅器件的微细加工中已经得到广泛应用，目前研究的焦点集中在化合物半导体。 |
| 8. | Research advances and applications of direct wafer bonding of - v compound semiconductors in optoelectronics device and its integration are generalized
概括介绍了近年来- v族化合物半导体材料键合技术的最新研究进展及其在光电子器件和集成领域的应用。 |
| 9. | High purity gallium metal is the basic ingredient for semiconductor compound material , and it is also highly utilized in the manufacture of super conductor material , alloy , alnico etc
高纯度金属镓是生产化合物半导体材料的基础材料，同时它还可以用于生产超导材料、合金材料、永磁材料等。 |
| 10. | In this dissertation , valuable researches have been carried out to the exploration of new synthetic methods in solution phase , and controlled syntheses of metal selenides and tellurides
本论文在硒碲化合物半导体纳米材料的化学合成新途径及其调控合成方法等方面做了很多有益的探索性研究。 |
