| 1. | Compound semiconductor materials
化合物半导体材料 |
| 2. | Research advances and applications of direct wafer bonding of - v compound semiconductors in optoelectronics device and its integration are generalized
概括介绍了近年来- v族化合物半导体材料键合技术的最新研究进展及其在光电子器件和集成领域的应用。 |
| 3. | High purity gallium metal is the basic ingredient for semiconductor compound material , and it is also highly utilized in the manufacture of super conductor material , alloy , alnico etc
高纯度金属镓是生产化合物半导体材料的基础材料，同时它还可以用于生产超导材料、合金材料、永磁材料等。 |
| 4. | It is the only one compound semiconductor whose native oxide is sio2 . therefore , the sic devices can be manufactured using the technology of the silicon processing , for example mos devices
Sic是唯一可以氧化生长成sio _ 2的化合物半导体材料，这使得它可以运用si平面工艺条件进行sic器件的制造，特别制作mos器件方面。 |
| 5. | In this paper , the author demonstrated the basic principle , development history and characters of high - press liquid - enveloped czochralski method ( leg ) , and its application in producing the gap semi - conductors , at the same time of introducing the general situation of them
本文论述了高压液封直拉法的基本原理、发展历史、特点，该法在半导体材料行业的应用及应用中的影响因素，化合物半导体材料磷化镓的概况、高压液封直拉法在制备该材料时的应用。 |
| 6. | Gaas crystal is a kind of iii - v group compound semiconductor material with good electrical performance . the semiconductor devices and integrated circuit ( ic ) fabricated on gaas substrate have such advantages of hign - speed information processing that they have drawn the researcher ' s attention
Gaas晶体是一种电学性能优越的-族化合物半导体材料，以其为衬底制作的半导体器件及集成电路，由于具有信息处理速度快等优点而受到青睐，成为近年来研究的热点。 |
| 7. | After a brief introduction to the excitation of semiconductor luminescence diode , the light - emitting machenisms of various new luminescence materials , including - and - semiconductor compounds and ps , the structures of different luminescence diodes , and their properties were discussed , and the application of semiconductor luminescence diode in modern science was presented
在简介半导体发光二极管的辐射复合基础上，详细讨论了包括?族、 ?族化合物半导体材料和多孔硅( ps )等新发光材料在内的各种发光材料的发光机理、发光二极管的结构与特性.并介绍了半导体发光二极管在近代科学中的应用 |
| 8. | In this work of part 1 , as a main body of this dissertation , multiple experimental methods are applied to investigate the optical properties of gap1 - xnx alloys with the n composition varying from 0 . 05 % to 3 . 1 % . in part 2 , the transient photoluminescence of iii - v semiconductor gainp and algainp alloys are studied
随着与氮有关的化合物半导体在短波发光器件(如蓝色发光二极管和紫色激光器件等)方面的巨大应用潜力和发展， gapn作为一种新型的含氮-族化合物半导体材料，其光电性质引起了人们的关注。 |
| 9. | The ii - vi semiconductor cd1 - xznxte has a wide variety of applications including x - ray or y - ray detectors , solar cells and electro - optical modulators . but , the most common use of cd1 - xznxte ( especially for x = 0 . 04 - 0 . 05 ) is as the substrate for the epitaxy of hg1 - xcdxte infrared ( ir ) detector wafers
Cd _ ( 1 - x ) zn _ xte晶体具有十分优异的光、电性能，既可作为外延hgcdte的衬底，又可用来制作x射线及射线探测器、太阳能电池等多种光电转换器件，是一种非常重要的-族化合物半导体材料。 |
| 10. | Cubic boron nitride ( cbn ) is a synthesized wide - band - gap iii - v compound semiconductor and has lots of excellent physical and chemical properties . it has been attracted a nice bit of attention for years because of its application in mechanics , calorifics , optics and electronics
立方氮化硼( cbn )是一种人工合成的宽带隙-族化合物半导体材料，它有许多优异的物理化学性质，在力学、热学、光学、电子学等方面有着非常诱人的应用前景，多年来一直吸引着国内外众多研究者的兴趣。 |
