| 1. | Hysteresis in aluminum oxides films growth with pulsed reactive sputtering
铝靶脉冲反应溅射沉积氧化铝薄膜中的迟滞回线的研究 |
| 2. | By means of x - ray diffractometry , it is found the fluorocarbon films are amorphous
X - ray衍射仪对溅射沉积膜的结构进行了研究结果表明cf膜是无定型的。 |
| 3. | Crystal structure and metal - insulator transition properties of dc magnetron sputtered la0 . 825sr0 . 175mno3 films
直流磁控溅射沉积锰酸锶镧薄膜的结构与相变特性研究 |
| 4. | Helium - charged al films are prepared by direct current ( dc ) magnetron sputtering with a he / ar mixture
摘要采用氦氩混合气氛下直流磁控溅射沉积方法制备含有氦原子的金属铝膜。 |
| 5. | The bilayer manganite film la2 - 2xsr1 + 2xmn207 ( x = 0 . 32 ) were successfully prepared by pulsed laser deposition ( pld ) method
我们采用脉冲激光溅射沉积( pld )方法来制备双层薄膜。 |
| 6. | This thesis detailedly discussed die preparation of zrn films with microware - ecr plasma enhanced magnetron sputtering deposition ( mw - ecrpemsd ) technology
本文探讨了制备zrn薄膜的微波- ecr等离子体增强非平衡磁控溅射沉积工艺。 |
| 7. | Sic films are synthesized using two technologies of pulse laser deposition ( pld ) and chemical vapor deposition ( cvd ) and the characteristics of sic films are analysized in this paper
本工作采用激光溅射沉积( pld )和激光辅助热丝化学气相沉积( hfcvd )两种实验技术制备了sic薄膜，并对薄膜特性进行了研究。 |
| 8. | The molecular structure of the sputtered titanium oxide films were investigated by xps and x - ray diffraction . it was found that the ratio of ti / o increases when pressure increases , and there is a optimum ratio of ar / o2 for the sake of obtaining more tio2 on pet surface
利用x射线衍射法( x - ray )对溅射沉积膜的表面物相结构进行了研究，发现在本实验室条件下溅射生成的膜均是无定型结构。 |
| 9. | Three kinds of different methods , namely anode oxidation , micro - arc oxidation and dc reactive magnetron sputtering , were employed to treat aluminum substrate which is used for power electronic devices in order to get an insulating surface by form a layer of aluminum nitride ( aln ) or aluminum oxide ( al2o3 ) film
本文分别采用阳极氧化法、微弧氧化法和磁控反应溅射沉积氮化铝薄膜的方法对功率电子器件用金属铝基板表面进行绝缘化处理。 |
| 10. | We prepare the si - sio2 and ge - sio2 thin film by using the dual ion beam co - sputtering method and the rf co - sputtering technique respectively , adjusting the substrate temperature ( ts ) and the annealing temperature ( ta ) . then we analysis the structure of the thin film by using the xrd and tem
论文采用双离子束溅射和射频磁控溅射沉积技术，通过改变薄膜沉积过程中基片温度( t _ s )以及薄膜制备完成后退火温度( t _ a )分别制备了si - sio _ 2和ge - sio _ 2薄膜。 |
