| 1. | Stress - dependent hot carrier degradation for pmosfets structure under stress mode vg
2应力模式下应力相关的热载流子退化 |
| 2. | A new hot - carrier - induced tddb model of ultra - thin gate oxide is reported in this dissertation
本文提出了一个全新的热载流子增强的超薄栅氧化层经时击穿模型。 |
| 3. | Hot - carrier induced oxide breakdown shows different characteristics compared with that induced by conventional fn stress
与通常的fn应力实验相比较，热载流子导致的超薄栅氧化层击穿显示了不同的击穿特性。 |
| 4. | Under hot carrier stress , device degradation is the consequence of hot carrier induced defect generation locally at drain side
在热载流子应力条件下,器件的退化主要是由于在漏极附近由热载流子产生的损伤缺陷引起的。 |
| 5. | Therefore , the solution to the hot - carrier degradation of mos circuits is obtained . the other hot - carrier immunity techniques such as
对抗热载流子退化的mos器件lddnghtlydopeddrain ）结构及栅氧化层加固技术也作了简单的介绍。 |
| 6. | Tddb and hce always take place simultaneously under device operation conditions . hot - carrier enhanced tddb effect of ultra - thin gate oxide is investigated by using substrate hot - carrier injection technique
在通常的工作条件下，氧化层的经时击穿和热载流子效应总是同时存在的。 |
| 7. | Similar to hot carrier degradation , asymmetric on - current recovery was also observed and discussed . device degradation behaviors are compared in low vd - stress and in high vd - stress condition
在自加热退化中我们也发现了类似热载流子退化中的非对称性恢复现象,并对其退化特点和模型进行了讨论。 |
| 8. | This dissertation investigates the breakdown theory and reliability characterization methods of the time dependent dielectric breakdown ( tddb ) for the ultra - thin gate oxide , and the hot - carrier effect ( hce ) in deep sub - micron mosfet ' s
本文对超薄栅氧化层经时击穿( tddb )击穿机理和可靠性表征方法以及深亚微米mos器件热载流子效应( hce )进行了系统研究。 |
| 9. | Device degradation behaviors of typical - sized n - type metal induced lateral crystallized polycrystalline silicon thin film transistors were investigated under two kinds of dc bias stresses : hot carrier stress and self - heating stress
本文主要研究了典型尺寸的n型金属诱导横向结晶多晶硅薄膜晶体管在两种常见的直流应力偏置下的退化现象:热载流子退化和自加热退化。 |
| 10. | So , both 1 / f noise power spectrum measurement and similarity coefficient extracted from its time series can offer economical , effective and indestructible tool to detect the latent damage induced by esd and hci for mosfets
因此，无论是1 / f噪声功率谱的测试还是由其时间序列提取得到的相似系数均可以作为经济、有效、完全非破坏性的工具，替代传统的电特性用于检测静电引起的mos器件潜在损伤以及热载流子注入损伤。 |
