| 1. | Investigation of a type of organic metal schottky diode
金属肖特基二极管的实验研究 |
| 2. | So , sbd has been widely used in microwave field
这使得肖特基二极管在微波领域有着广泛的应用。 |
| 3. | Semiconductors . microwave diodes . schottky diodes . general requirements
半导体.微波二极管.肖特基二极管.一般要求 |
| 4. | Simulation for metal - semiconductor - metal - photodetector msm - pd circuit based - on pspice
的肖特基势垒光电探测器的模拟 |
| 5. | Schottky diodes are incorporated in inputs and outputs to clamp undershoot ( see figure 16 )
肖特基二极管一起对输入和输出负过冲进行箝位(参见图16 ) 。 |
| 6. | Series resistance is an important factor confining the response speed of schottky barrier diode
串连电阻是制约肖特基二极管响应速度的一个关键因素。 |
| 7. | Single walled carbon nanotube ; chemical vapor deposition ; schottky barriers ; field - effect transistor
单壁碳纳米管化学气相沉积肖特基势垒场效应晶体管 |
| 8. | Semiconductor discrete devices . detail specification for type 2dk13 schottky ailicon switching rectifier diode
半导体分立器件. 2dk13型硅肖特基开关整流二极管详细规范 |
| 9. | Semiconductor discrete devices . detail specification for type 2dk15 schottky silicon switching rectifier diode
半导体分立器件. 2dk15型硅肖特基开关整流二极管详细规范 |
| 10. | Schottky barrier diode ( sbd ) is based on the rectification characteristics of metal - semiconductor contact
肖特基势垒二极管是利用金属半导体的整流接触特性而制成的二极管。 |
