| 1. | Investigation of a type of organic metal schottky diode
金属肖特基二极管的实验研究 |
| 2. | So , sbd has been widely used in microwave field
这使得肖特基二极管在微波领域有着广泛的应用。 |
| 3. | Semiconductors . microwave diodes . schottky diodes . general requirements
半导体.微波二极管.肖特基二极管.一般要求 |
| 4. | Schottky diodes are incorporated in inputs and outputs to clamp undershoot ( see figure 16 )
肖特基二极管一起对输入和输出负过冲进行箝位(参见图16 ) 。 |
| 5. | Series resistance is an important factor confining the response speed of schottky barrier diode
串连电阻是制约肖特基二极管响应速度的一个关键因素。 |
| 6. | The concrete work in this thesis : 1 ) fabrication of high response frequency sbd using thin si epi - layer
本文的具体工作可归纳为： 1 )薄硅外延片研制高频肖特基二极管的原型器件。 |
| 7. | B ) sbd was made using the si epilayer as the active layer , qualified with a set of device technology
B )在薄硅外延片的生长基础上，探索制作肖特基二极管的相关工艺，研制高频sbd原型器件。 |
| 8. | 2 ^ algan - based sbd was made using ti / al and au as ohmic contact and schottky contact respectively
2 、利用ti al双层电极作欧姆接触， au电极作肖特基接触，制造出algan基肖特基二极管原型器件。 |
| 9. | The system which utilizing a dunn diode emitter and unbiased schottky diode detector was compact , simple and portable
该系统采用耿氏二极管作发射器，无偏置肖特基二极管作探测器，具有小型、简单和便携的特点。 |
| 10. | B ) a set of device fabrication technology was developed to realize zno sbd . obvious rectifying characteristic was obtained using pt as schottky contact electrode with zno
B )探索适合zno肖特基二极管的制作工艺，选用pt作肖特基电极研制肖特基二极管原型器件。 |
