Chinese translation for "载流子寿命"
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- carrier lifetime
Related Translations:
载流子: [固体物理] carrier; charge carrier; current carrier 载流子产生: carrier generation 正电荷载流子: positive carrierpositive charge carrier
- Example Sentences:
| 1. | Measurement of minority carrier life time in germanium by photoconductive decay method
用光电导衰减法测定锗中少数载流子寿命 | | 2. | Standard test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconductivity decay
硅和锗体内少数载流子寿命测定光电导衰减法 | | 3. | Testing of materials for semiconductor technology - measurement of carrier lifetime in silicon single crystals - recombination carrier lifetime at low injection by photoconductivity method
半导体工艺材料的试验.硅单晶中载流子寿命的测量.用 | | 4. | However , the switching power loss of si p - i - n diode increase with the switching frequency so that it is necessary to reduce the switching power loss by lifetime control technology which employs lifetime killer such as au , pt or radiation to lower the stored charge ( qs )
但是，其开关功耗随着开关频率的提高而增大以至于不得不采用寿命控制技术(掺金、铂和辐照等)来降低少数载流子寿命从而降低开关功耗。 | | 5. | The design and analysis of vertical pnp transistor was accomplished through the relationship between carriers lifetime of epitaxy layer and current gain , rate of surface combination and leakage current , carriers lifetime of epitaxy layer and switch speed
从外延层载流子寿命与晶体管放大倍数，表面复合率与漏电流，以及外延层载流子寿命与晶体管开关速度等方面对于输出级纵向pnp管进行了较为详细的设计与分析，达到了电路中对输出级纵向pnp管主要参数指标的要求。 | | 6. | For the material characteristics limitation of si , the switching power loss of si pin diode increase with the switching frequency so that it is necessary to reduce the switching power loss by lifetime control technology which employs lifetime killer such as au , pt or radiation to lower the stored charge ( q . , )
Sipin二极管由于其材料特性的局限性，使开关功耗随开关频率的提高而增大，通常采用寿命控制技术(如掺金、铂和辐照等)降低少数载流子寿命从而降低开关功耗。 | | 7. | After measuring dark current , photocurrent and response to x pulse of gaas detector before and after 1 . 7 mev electronic radiation , the response tune , fall time of trailing edge , full width of half maximum ( fwhm ) , sensitivity , carrier life , mobility are researched and contrasted . the result shows that the response speed of detector , time resolution ratio and nonlinear of back edge of output signal have been improved greatly after electronic radiation . though sensitivity of the detector reduces , its measuring range can be widened
为了使探测器的性能得到进一步的提高，我们对其进行了电子辐照改性，并测量了本征砷化镓探测器和经过1 . 7mev电子辐照的探测器的暗电流、光电流及对x射线的脉冲响应，并对其响应时间，后沿下降时间，半高宽( fwhm ) ，载流子寿命，灵敏度进行对比，研究，结果显示经电子辐照后的探测器的性能得到了改善，使响应速度，分辩率进一步提高，并消除了探测器输出信号后沿的非线性，虽灵敏度有所降低，反而使其测量范围得以拓宽。 | | 8. | In the new structure , a n + buffer layer is introduced into the bulk silicon substrate with a triple - diffusion process . . the new structure has two features : one is the feature of npt - igbt : the thin and lightly - doped p + layer and the high lifetimes of the carriers ; the other is the feature of pt - igbt : n7n + structure which can make the n " region very thin
新结构用三重扩散的方法在n ~ -单晶片上引入了n ~ +缓冲层，仍然保留了npt - igbt中薄而轻掺杂p层和高载流子寿命的本质优点，同时又具有pt - igbt中n ~ - ( n ~ + )双层复合的薄耐压层(即薄基区)的优点。 | | 9. | We define the recombination time of excess electrons in p field as the minority carrier lifetime . in theory , we developed the equation between excess minority carriers lifetime and the open - circuit voltage decay ; moreover , the effect of capacitance to general open - circuit voltage is also investigated . both different efficiency solar cells are measured by the method and showed the relations between the minority carrier lifetime and the performance of solar cells , which provides great useful guidelines for fabricating high - efficiency silicon solar cell in industry
根据太阳电池的工作原理，详细地论述了用脉冲光源照射n / p结太阳电池时光电压的产生，理论上给出了注入p区的电子复合带来的开路电压与少子寿命的关系，也研究了n / p结势垒电容放电对开路电压衰减的影响关系，推导了利用开路电压随时间衰减的关系来测量少数载流子寿命的理论公式。 | | 10. | The vertical structure optimization through simulation of the new structure , low loss igbt ( lpl - igbt ) has been discussed in detail in this paper . in comparison with the prevalent igbt , lpl - igbt has not only the merit of transparent back emitter and high lifetime of carriers owned by npt - igbt but also the complex n7n + voltage sustain layer structure owned by pt - igbt . not only possesses lpl - igbt lower power loss but also the other capacities are no better than npt - igbt such as break down voltage , current capacities , safe operation area and cost
与现有igbt相比较， lpl - igbt在结构上保留了npt - igbt中的透明发射区和高载流子寿命的本质优点，同时又具有pt - igbt中n ~ - n ~ +复合薄耐压层的优点；在器件性能上， lpl - igbt不仅具有比npt - igbt更低的能量损耗(包括通态损耗和开关损耗) ，而且其余性能如器件耐压、电流密度、安全工作区以及制造成本等相对现有npt - igbt均有明显改善。 |
- Similar Words：
- "载流子漂移速度" Chinese translation, "载流子漂移型电晶体" Chinese translation, "载流子漂移型晶体管" Chinese translation, "载流子屏蔽" Chinese translation, "载流子迁移率" Chinese translation, "载流子输送" Chinese translation, "载流子跃过时间" Chinese translation, "载流子注入" Chinese translation, "载流子注入电发光" Chinese translation, "载流子注射发光" Chinese translation
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