| 1. | The density of carriers in the region has been depleted .
在这个区内的载流子浓度被消耗殆尽。 |
| 2. | High surface hole concentration p - type gan using mg implantation
应用mg离子注入获得高表面空穴载流子浓度p -型gan |
| 3. | Determination of carrier concentration in gallium arsenide by the plasma resonance minimum
砷化镓中载流子浓度等离子共振测量方法 |
| 4. | Gallium arsenide epitaxial layer - determination of carrier concentration - voltage - capacitance method
砷化镓外延层载流子浓度电容-电压测量方法 |
| 5. | Calculation results show that 90 % carriers will populate in the first ten subbands when effective field is larger than 105v / cm
计算表明,当横向电场为105v / cm时,前十个子能带上的载流子浓度占总浓度的90 % 。 |
| 6. | The tail of localized states in the band gap is formed , and in the high temperature range , the behavior of metallic conduction can be observed
并根据其电导、载流子浓度、迁移率随温度的变化分析zno ： al薄膜的导电机制。 |
| 7. | Using this expression , the interrelation of the carrier density in each segment and the emission wavelength can be predicted while the laser is lasing
该表达式可以用来预测激光器激射工作时，两段载流子浓度和激射波长之间的相互关系。 |
| 8. | Mg ions were implanted on mg - doped gan grown by metalorganic chemical vapor deposition . the p - type gan was achieved with high hole concentration 8 . 2810
应用mg离子注入mocvd法生长掺杂mg的gan中，在经过800 , 1h的退火后，获得高空穴载流子浓度8 . 2810 |
| 9. | The results indicate that with increasing the thickness of fes2 thin films , the electrical conductivity , the carrier concentration and the absorption coefficient decrease
结果表明，随着薄膜厚度的增加， fes2的电阻率升高，载流子浓度下降，在高吸收区fes2薄膜的光吸收系数也呈下降趋势。 |
| 10. | Conformed by van der pauw hall measurement after annealing at 800 for 1h . this is the first experimental report of mg implantation on mg - doped gan and achieving p - type gan with high surface hole concentration
的p -型gan 。首次报道了实验上通过mg离子注入到mg生长掺杂的gan中并获得高的表面空穴载流子浓度。 |
